LSIT124 [Linear Systems]
SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS; SUPER - BETA单片双NPN晶体管
| 型号： | LSIT124 |
| 厂家： | 
Linear Systems |
| 描述： | SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IT124
SUPER-BETA
MONOLITHIC DUAL
NPN
Linear Integrated Systems
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT124
Pin for Pin Compatible
C1
C2
E1
E2
3
5
7
ABSOLUTE MAXIMUM RATINGS NOTE 1
(T = 25°C unless otherwise noted)
A
B1 2
6 B2
IC
Collector-Current
10mA
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
1
-65°C to +200°C
+150°C
C1
C2
B1 E1 E2 B2
26 X 29 MILS
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
BOTTOM VIEW
4.3mW/°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVCBO
BVCEO
BVEBO
BVCCO
hFE
CHARACTERISTICS
IT124
UNITS CONDITIONS
Collector-Base Breakdown Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
2
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
V
V
V
IC = 10µA
IC = 10µA
IE = 10µA
IC = 10µA
IC = 1µA
IE = 0
IB = 0
2
6.2
100
1500
1500
0.5
100
100
2
IC = 0
NOTE 2
IE = 0
VCE = 1V
VCE = 1V
hFE
DC Current Gain
IC = 10µA
VCE(SAT)
ICBO
Collector Saturation Voltage
Collector Cutoff Current
V
IC = 1mAIB = 0.1 mA
pA
pA
pF
pF
pA
MHz
dB
IE = 0
VCB = 1V
IEBO
Emitter Cutoff Current
IC = 0
VEB = 3V
VCB = 1V
COBO
CC1C2
IC1C2
Output Capacitance
IE = 0
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
2
VCC = 0
VCC = ±50V
IC = 100µA
IC = 10µA
250
100
3
fT
VCE = 1V
VCE = 3V
f=1KHz
NF
RG = 10 KΩ
BW = 200Hz
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
IT124
UNITS
mV
mV
CONDITIONS
|VBE1-VBE2
|
Base Emitter Voltage Differential
2
5
TYP.
MAX.
IC = 10 µA
VCE = 1V
VCE = 1V
∆|(VBE1-VBE2)|/∆T Base Emitter Voltage Differential
5
TYP.
MAX.
MAX.
µV/°C IC = 10 µA
Change with Temperature
15
0.6
µV/°C T = -55°C to +125°C
|IB1- IB2
|
Base Current Differential
nA
IC = 10µA
VCE = 1V
TO-71
TO-78
P-DIP
Six Lead
(8.13)
(7.37)
0.320
0.290
0.335
0.370
0.230
DIA.
0.195
0.175
0.209
DIA.
0.305
0.335
C1 1
C2
B2
8
MAX.
0.030
0.150
0.405
(10.29)
MAX.
0.165
0.185
0.040
MAX.
B1 2
E1 3
7
0.115
0.016
0.019
DIM. A
6 E2
MIN. 0.500
6 LEADS
0.019
0.016
0.500 MIN.
0.050
0.016
0.021
DIM. B
N/C 4
5
N/C
SEATING
PLANE
DIA.
0.200
0.100
0.100
0.029
0.045
SOIC
3
7
3
7
2
1
8
4
5
6
2
4
0.150 (3.81)
0.158 (4.01)
1
8
5
6
0.100
C1 1
C2
B2
8
45°
45°
B1
2
0.188
7
6
5
(4.78)
0.046
0.036
0.048
0.028
0.028
0.034
0.197(5.00)
E1 3
E2
N/C
4
N/C
(5.79)
0.228
(6.20)
0.244
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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